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Metal-to-Insulator Crossover in the Low-Temperature Normal State of Bi_{2}Sr_{2-x}La_{x}CuO_{6+\delta}

机译:低温正常状态下的金属 - 绝缘体交叉   Bi_ {2} sR_ {2-X}了La_ {X} CuO_ {6+ \增量}

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摘要

We measure the normal-state in-plane resistivity of La-doped Bi-2201 singlecrystals at low temperatures by suppressing superconductivity with 60-T pulsedmagnetic fields. With decreasing hole doping, we observe a crossover from ametallic to insulating behavior in the low-temperature normal state. Thiscrossover is estimated to occur near 1/8 doping, well inside the underdopedregime, and not at optimum doping as reported for other cuprates. Theinsulating regime is marked by a logarithmic temperature dependence of theresistivity over two decades of temperature, suggesting that a peculiar chargelocalization is common to the cuprates.
机译:我们通过抑制60-T脉冲磁场的超导性,来测量La掺杂的Bi-2201单晶在低温下的常态面内电阻率。随着空穴掺杂的减少,我们观察到在低温正常状态下从金属行为到绝缘行为的过渡。据估计,这种交叉发生在1/8掺杂附近,恰好在低掺杂体系内部,而不是其他铜酸盐所报告的最佳掺杂。绝缘状态的特征是在二十年的温度下电阻率的对数温度依赖性,这表明铜酸盐具有特殊的电荷定位。

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